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SIDR638DP-T1-GE3 MOSFET, N-Ch, 40V, 100A, 150DEG C, 125W Vishay Shielding Type: EMI Shielding

SKU: 13361094896
4.5
EUR13.95 EUR50.95
SIDR638DP-T1-GE3 MOSFET, N-Ch, 40V, 100A, 150DEG C, 125W Vishay Shielding Type: EMI Shielding
SIDR638DP-T1-GE3 MOSFET, N-Ch, 40V, 100A, 150DEG C, 125W Vishay Shielding Type: EMI Shielding
SIDR638DP-T1-GE3 MOSFET, N-Ch, 40V, 100A, 150DEG C, 125W Vishay Shielding Type: EMI Shielding
SIDR638DP-T1-GE3 MOSFET, N-Ch, 40V, 100A, 150DEG C, 125W Vishay Shielding Type: EMI Shielding

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Ships within 48 hours · Estimated delivery Sep 4 - Sep 9

Description

Shielding Type: EMI Shielding

MULTICOMP PRO - MP005432 - Wire

Laser Class: Class 2

JWPF Connectors

0 Controller Card Adaptor with UASP

SIDR638DP-T1-GE3 MOSFET, N-Ch, 40V, 100A, 150DEG C, 125W Vishay Shielding Type: EMI ShieldingVISHAY SIDR638DP T1 GE3 Power MOSFET, N Channel, 40 V, 100 A, 730 ohm, PowerPAK SO, Surface Mount Transistor Polarity: N Channel Continuous Drain Current Id: 100A Drain Source Voltage Vds: 40V On Resistance Rds(on): 0. 00073ohm Rds(on) Test Voltage Vgs: 10V Threshold Voltage Vgs: 2. 3V Power Dissipation Pd: 125W Transistor Case Style: PowerPAK SO No. of Pins: 8Pins Operating Temperature Max: 150C Product Range: TrenchFET Gen IV Series Automotive

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